IEEE

Vertical Channel Transistor (VCT) as Access Transistor for Future 4F

Abstract: In this work, a novel 4F 2 VCT (vertical channel transistor) targeting for next generation of DRAM is proposed. We approached process feasibility and device performance of $\mathbf{4 F}^{2}$ ...
IEEE

MOSFET-Based RF Switch With Active Biasing

Abstract: A biasing method for a stacked field-effect transistor (FET)-based radio-frequency (RF) switch is proposed. The advantage of the method over conventional passive resistive biasing is the ...