If you decide to have a ‘big sleep’ in a meeting, fear not, a wearable could come to the rescue. Plaud has revealed its laudable ambitions with the ...

Abstract: In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a 3 nm Al2 ...